Figure 6 |
[17] According to Belikovich et al. [2005] the linear recombination law in the D region may be explained on the basis of the hypothesis of intense recombination of positive and negative charges on dust-like particles. The number of particles in a volume unit is limited and is not related to the value of the electron concentration. The term prevailing in the balance equation and containing the concentration of dust-like particles leads to the linear recombination law. Above 80 km atomic oxygen presents in the atmosphere and prevents cluster formation. Because of that the quadratic recombination law begins to work.
[18] One can explain the increase in the electron concentration during flares by variations in the ion composition of the ionospheric D region. It is known [Danilov, 1989; Mitra, 1974] that the portion of the rapidly recombining complex clustered ions in the total amount of positive ions decreases. Theoretical models of the ion composition based on the ion chemistry [Smirnova et al., 1988], in particular conditions of the polar ionosphere, lead to the same conclusion. The calculations show that considerable destruction of clustered ions under the action of an X-ray solar flare of the M importance occurs in the lower ionosphere below 70 km. The depletion of the clustered ions content leads to a significant depletion of the effective recombination coefficient at altitudes of 65-95 km. The decrease in the effective recombination coefficient is accompanied by an increase in the electron concentration.
[19] The trough in the electron concentration vertical profile at a height of 80 km (see Figure 3) during the maximum of the 5 April flare can be related to the instrumental features of the partial reflections method and conditions in the environment. Apparently, the existence of high electron concentration and strong absorption during a solar flare limits the height up to which the data could be obtained by this method at a single frequency. However, the latter assumption requires a thorough checking.
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